? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dsx t j = 25 c to 150 c 1000 v v gsx continuous 20 v v gsm transient 30 v p d t c = 25 c 300 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220 & to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100183a(12/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dsx v gs = - 5v, i d = 250 a 1000 v v gs(off) v ds = 25v, i d = 250 a - 2.5 - 4.5 v i gsx v gs = 20v, v ds = 0v 100 na i dsx(off) v ds = v dsx , v gs = - 5v 5 a t j = 125 c 50 a r ds(on) v gs = 0v, i d = 3a, note 1 2.2 i d(on) v gs = 0v, v ds = 50v, note 1 6 a depletion mode mosfet n-channel IXTA6N100D2 ixtp6n100d2 ixth6n100d2 v dsx = 1000v i d(on) > 6a r ds(on) 2.2 features ? normally on mode ? international standard packages ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? audio amplifiers ? start-up circuits ? protection circuits ? ramp generators ? current regulators ? active loads g = gate d = drain s = source tab = drain to-247 (ixth) d (tab) g d s to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab) preliminary technical information
IXTA6N100D2 ixtp6n100d2 ixth6n100d2 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 3a, note 1 2.6 4.2 s c iss 2650 pf c oss v gs = -10v, v ds = 25v, f = 1mhz 167 pf c rss 41 pf t d(on) 25 ns t r 80 ns t d(off) 34 ns t f 47 ns q g(on) 95 nc q gs v gs = 5v, v ds = 500v, i d = 3a 11 nc q gd 51 nc r thjc 0.41 c/w r thcs to-220 0.50 c/w to-247 0.21 c/w safe-operating-area specification characteristic values symbol test conditions min. typ. max. soa v ds = 800v, i d = 225ma, t c = 75 c, tp = 5s 180 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v sd i f = 6a, v gs = -10v, note 1 0.8 1.3 v t rr 952 ns i rm 16 a q rm 7.6 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 5v, v ds = 500v, i d = 3a r g = 2.4 (external) pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline i f = 3a, -di/dt = 100a/ s v r = 100v, v gs = -10v to-247 (ixth) ad outline 1 = gate 2 = drain 3 = source preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-263 (ixta) outline 1. gate 2. drain 3. source 4. drain dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070
? 2009 ixys corporation, all rights reserved IXTA6N100D2 ixtp6n100d2 ixth6n100d2 fig. 1. output characteristics @ t j = 25oc 0 1 2 3 4 5 6 01234567891011 v ds - volts i d - amperes v gs = 5v 2v 1v - 2v 0v - 3v -1v fig. 2. extended output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 0 102030405060 v ds - volts i d - amperes v gs = 5v 2v 1v - 2v -1v 0v - 3v fig. 3. output characteristics @ t j = 125oc 0 1 2 3 4 5 6 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 5v 0v -1v - 2v - 3v fig. 4. drain current @ t j = 25oc 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.00v - 3.75v - 3.25v - 3.50v - 4.00v - 4.25v - 4.50v fig. 5. drain current @ t j = 100oc 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.25v - 3.50v - 3.75v - 4.50v - 4.00v - 4.25v fig. 6. dynamic resistance vs. gate voltage 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 v gs - volts r o - ohms ? v ds = 700v - 100v t j = 25oc t j = 100oc
IXTA6N100D2 ixtp6n100d2 ixth6n100d2 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. normalized r ds(on) vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 0v i d = 3a fig. 8. r ds(on) normalized to i d = 3a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 02468101214 i d - amperes r ds(on) - normalized v gs = 0v 5v - - - - t j = 125oc t j = 25oc fig. 9. input admittance 0 2 4 6 8 10 12 14 16 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc v ds = 30v fig. 10. transconductance 0 2 4 6 8 10 12 0 2 4 6 8 10121416 i d - amperes g f s - siemens t j = - 40oc v ds = 30v 25oc 125oc fig. 12. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 16 18 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc v gs = -10v t j = 25oc fig. 11. breakdown and threshold voltages vs. junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv / v gs(off) - normalized v gs(off) @ v ds = 25v bv dsx @ v gs = - 5v
? 2009 ixys corporation, all rights reserved ixys ref: t_6n100d2(6c)8-27-09 IXTA6N100D2 ixtp6n100d2 ixth6n100d2 fig. 17. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 14. gate charge -5 -4 -3 -2 -1 0 1 2 3 4 5 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = 500v i d = 3a i g = 10ma fig. 13. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 15. forward-bias safe operating area @ t c = 25oc 0.10 1.00 10.00 100.00 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms 100ms dc fig. 16. forward-bias safe operating area @ t c = 75oc 0.10 1.00 10.00 100.00 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc
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